Giant Magnetoresistance

Слайд 2

Outline

Introduction
Science of GMR
Anisotropic magnetoresistance
Giant magnetoresistance
Discovery of GMR
research by IBM
Application of GMR
GMR-based

Outline Introduction Science of GMR Anisotropic magnetoresistance Giant magnetoresistance Discovery of GMR
spin valves in hard drives
Impact of GMR on the storage media industry

Слайд 3

GMR – why is it useful?

Discovery and application of the GMR phenomenon

GMR – why is it useful? Discovery and application of the GMR
is responsible for the ubiquitous availability of economical, high density information storage in our society.
Compact 160 GB Mp3 players and 1 TB hard drives, now widely available, owe their existence to GMR and subsequent related advances.

Слайд 4

Science of GMR Giant magnetoresistance

System:
a thin layer of nonmagnetic material sandwiched between

Science of GMR Giant magnetoresistance System: a thin layer of nonmagnetic material
two layers of magnetic material.
Right: a Fe-Cr-Fe trilayer used in Grünberg’s original experiment.

[3]

Слайд 5

Science of GMR Mott Model

The electrical conductivity in metals can be described in

Science of GMR Mott Model The electrical conductivity in metals can be
terms of two largely independent conducting channels, corresponding to the up-spin and down-spin electrons, and electrical conduction occurs in parallel for the two channels.
In ferromagnetic metals the scattering rates of the up-spin and down-spin electrons are different.
(We will assume that the scattering is strong for electrons with spin antiparallel to the magnetization direction and weak for electrons with spin parallel to the magnetization direction.)

Слайд 6

Science of GMR Giant magnetoresistance

Parallel magnetization
Up-spin electrons experience small resistance, down-spin electrons experience

Science of GMR Giant magnetoresistance Parallel magnetization Up-spin electrons experience small resistance,
large resistance.
Total resistance is

Слайд 7

Science of GMR Giant magnetoresistance

Antiparallel magnetization
Both electron spins experience small resistance in one

Science of GMR Giant magnetoresistance Antiparallel magnetization Both electron spins experience small
layer and large resistance in the other.
Total resistance is

Слайд 8

Discovery of GMR Fert and Grünberg

Discovered by independently by Professor Albert Fert of

Discovery of GMR Fert and Grünberg Discovered by independently by Professor Albert
Université Paris-Sud in France and Professor Peter Grünberg of Forschungszentrum in Jülich, Germany.
Both groups submitted papers to Physical Review in the summer of 1988.

Слайд 9

Discovery of GMR IBM

Stuart Parkin of IBM attempted to reproduce the effect using

Discovery of GMR IBM Stuart Parkin of IBM attempted to reproduce the
the sputtering technique
Fert and Grünberg used molecular beam epitaxy, a more precise but slower and more expensive method.
Parkin’s group succeeded, observing GMR in the first multilayer sample’s produced.
Parkin’s group began experimenting with various sample compositions and layer thicknesses to better understand GMR and how to integrate it into magnetic storage.

Слайд 10

GMR in practice Spin Valve

[7].

[8]

GMR in practice Spin Valve [7]. [8]

Слайд 11

Read/Write Head

Read/Write Head
Имя файла: Giant-Magnetoresistance.pptx
Количество просмотров: 91
Количество скачиваний: 0