Содержание
- 2. Topic 2 High-Power Semiconductor Devices
- 3. Power Diode SCR Thyristor Gate Turn-Off Thyristor (GTO) Integrated Gate Commutated Thyristor (GCT) Insulated Gate Bipolar
- 4. Device Rating High-Power Semiconductor Devices
- 5. 4500V/800A press pack and 1700V/1200A module diodes Power Diode
- 6. Press pack device: Double sided cooling Low assembly cost and high power density Preferred choice for
- 7. 4500V/800A and 4500V/1500A SCRs SCR Thyristor
- 8. Switching Characteristics SCR Thyristor
- 9. Main Specifications 12000V/1500A SCR Thyristor SCR Thyristor
- 10. 4500V/800A and 4500V/1500A GTOs Gate Turn-Off (GTO) Thyristor
- 11. Symmetrical versus Asymmetrical GTOs Gate Turn-Off (GTO) Thyristor
- 12. Switching Characteristics Gate Turn-Off (GTO) Thyristor
- 13. Main Specifications 4500V/4000A Asymmetrical GTO Thyristor Gate Turn-Off (GTO) Thyristor
- 14. 6500V/1500A Symmetrical GCT GCT = Improved GTO + Integrated Gate + Anti-parallel Diode (optional) Integrated Gate
- 15. GCT Classifications Integrated Gate Commutated Thyristor
- 16. Switching Characteristics Integrated Gate Commutated Thyristor
- 17. Main Specifications 6000V/6000A Asymmetrical GCT Integrated Gate Commutated Thyristor
- 18. 1700V/1200A and 3300V/1200A IGBT modules Insulated Gate Bipolar Transistor (IGBT)
- 19. Static V-I Characteristics Switching characteristics IGBT Characteristics Insulated Gate Bipolar Transistor (IGBT)
- 20. Main Specifications 3300V/1200A IGBT Insulated Gate Bipolar Transistor (IGBT)
- 21. Cause of Voltage Imbalance Device Series Operation
- 22. Equal Voltage Sharing S1, S2, S3: GTO, GCT or IGBT Voltage Sharing: v1 = v2 =
- 23. Active Overvoltage Clamping (AOC) Assumption: S1 is turned off earlier than S2 VCE1 is clamed to
- 24. Summary
- 26. Скачать презентацию