Содержание

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Topic 2
High-Power Semiconductor Devices

Topic 2 High-Power Semiconductor Devices

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Power Diode
SCR Thyristor
Gate Turn-Off Thyristor (GTO)
Integrated Gate Commutated

Power Diode SCR Thyristor Gate Turn-Off Thyristor (GTO) Integrated Gate Commutated Thyristor
Thyristor (GCT)
Insulated Gate Bipolar Transistor (IGBT)
Switch Series Operation

Lecture Topics

High-Power Semiconductor Devices

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Device Rating

High-Power Semiconductor Devices

Device Rating High-Power Semiconductor Devices

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4500V/800A press pack and 1700V/1200A module diodes

Power Diode

4500V/800A press pack and 1700V/1200A module diodes Power Diode

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Press pack device:
Double sided cooling
Low assembly cost and high power

Press pack device: Double sided cooling Low assembly cost and high power
density
Preferred choice for high voltage high power applications

Heatsink Assembly

Power Diode

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4500V/800A and 4500V/1500A SCRs

SCR Thyristor

4500V/800A and 4500V/1500A SCRs SCR Thyristor

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Switching Characteristics

SCR Thyristor

Switching Characteristics SCR Thyristor

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Main Specifications

12000V/1500A SCR Thyristor

SCR Thyristor

Main Specifications 12000V/1500A SCR Thyristor SCR Thyristor

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4500V/800A and 4500V/1500A GTOs

Gate Turn-Off (GTO) Thyristor

4500V/800A and 4500V/1500A GTOs Gate Turn-Off (GTO) Thyristor

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Symmetrical versus Asymmetrical GTOs

Gate Turn-Off (GTO) Thyristor

Symmetrical versus Asymmetrical GTOs Gate Turn-Off (GTO) Thyristor

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Switching Characteristics

Gate Turn-Off (GTO) Thyristor

Switching Characteristics Gate Turn-Off (GTO) Thyristor

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Main Specifications

4500V/4000A Asymmetrical GTO Thyristor

Gate Turn-Off (GTO) Thyristor

Main Specifications 4500V/4000A Asymmetrical GTO Thyristor Gate Turn-Off (GTO) Thyristor

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6500V/1500A Symmetrical GCT

GCT = Improved GTO + Integrated Gate + Anti-parallel

6500V/1500A Symmetrical GCT GCT = Improved GTO + Integrated Gate + Anti-parallel
Diode (optional)

Integrated Gate Commutated Thyristor (GCT)

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GCT Classifications

Integrated Gate Commutated Thyristor

GCT Classifications Integrated Gate Commutated Thyristor

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Switching Characteristics

Integrated Gate Commutated Thyristor

Switching Characteristics Integrated Gate Commutated Thyristor

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Main Specifications

6000V/6000A Asymmetrical GCT

Integrated Gate Commutated Thyristor

Main Specifications 6000V/6000A Asymmetrical GCT Integrated Gate Commutated Thyristor

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1700V/1200A and 3300V/1200A IGBT modules

Insulated Gate Bipolar Transistor (IGBT)

1700V/1200A and 3300V/1200A IGBT modules Insulated Gate Bipolar Transistor (IGBT)

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Static V-I Characteristics

Switching characteristics

IGBT Characteristics

Insulated Gate Bipolar Transistor (IGBT)

Static V-I Characteristics Switching characteristics IGBT Characteristics Insulated Gate Bipolar Transistor (IGBT)

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Main Specifications

3300V/1200A IGBT

Insulated Gate Bipolar Transistor (IGBT)

Main Specifications 3300V/1200A IGBT Insulated Gate Bipolar Transistor (IGBT)

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Cause of Voltage Imbalance

Device Series Operation

Cause of Voltage Imbalance Device Series Operation

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Equal Voltage Sharing

S1, S2, S3:
GTO, GCT or IGBT

Equal Voltage Sharing S1, S2, S3: GTO, GCT or IGBT Voltage Sharing:
Voltage Sharing:
v1 = v2 = v3 in steady state
and transients
Static Voltage Sharing:
Rv
Dynamic Voltage Sharing:
Rs and Cs

Device Series Operation

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Active Overvoltage Clamping (AOC)

Assumption:
S1 is turned off earlier

Active Overvoltage Clamping (AOC) Assumption: S1 is turned off earlier than S2
than S2
VCE1 is clamed to Vm due to
active clamping.

Suitable for series IGBTs
Not applicable to GCTs

Device Series Operation

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